Wafer-scale patterned growth of vertically aligned carbon nanotubes

Wafer-scale patterned growth of vertically aligned carbon nanotubes

Internship Description

The project aims to optimize the patterned growth of vertically-aligned carbon nanotubes (VA-CNT) on wafers sized up to 4-inches using a plasma-enhanced chemical vapour deposition reactor. The first part will be to optimize the large-area and/or patterned deposition of the metal catalyst. Afterwards, different recipes for the growth of VA-CNT will be explored and, ultimately, a collection of wafers containing from SWCNTs to MWCNTs should be obtained. Characterization of the VA-CNT will be carried out using a collection of tools such as electron microscopy and Raman spectroscopy.​​​​

Deliverables/Expectations

Si wafers coated with a thin layer of a transition metal active for CNT growth
Si wafers coated with a patterned thin layer of a transition metal active for CNT growth
Mats of VA-CNTs grown on 4”-wafers
Patterned mats of VA-CNTs grown on 4”-wafers
One poster or oral communication at a conference
Final written report

Faculty Name

Pedro Da Costa

Field of Study

Materials Science and Engineering / Chemistry / Physics