​Professor Lanza's research focuses on the integration of two-dimensional (2D) materials in solid-state nano/micro-electronic devices and circuits, with special emphasis on memristive crossbar arrays and their use to build artificial neural networks. He puts special effort on using fabrication methods compatible with the industry, and to characterize the yield and variability of large amounts of devices in a statistical manner. He is one of the world leaders on the study of hexagonal boron nitride (h-BN), as well as many other ultra-thin dielectrics for electronic devices (SiO2, HfO2, Al2O3). He is famous for his expertise on nanoelectronic characterization of multiple materials and devices using scanning probe microscopy (SPM).