Wafer-scale patterned growth of vertically aligned carbon nanotubes


Project Description

​The project aims to optimize the patterned growth of vertically-aligned carbon nanotubes (VA-CNT) on wafers sized up to 4-inches using a plasma-enhanced chemical vapour deposition reactor. The first part will be to optimize the large-area and/or patterned deposition of the metal catalyst. Afterwards, different recipes for the growth of VA-CNT will be explored and, ultimately, a collection of wafers containing from SWCNTs to MWCNTs should be obtained. Characterization of the VA-CNT will be carried out using a collection of tools such as electron microscopy and Raman spectroscopy.​​​​​
Program - Materials Science & Engineering
Division - Physical Sciences and Engineering
Field of Study - ​Materials Science and Engineering / Chemistry / Physics

About the

Pedro M. Da Costa

Assistant Professor, Material Science and Engineering

Pedro M. Da Costa
​Professor Da Costa's research interests embrace a range of synthesis and characterization techniques for one- and two-dimensional materials, with particular focus on carbon nanostructures, semiconductor materials and electron microscopy. He is also engaged in the manipulation of discrete nanoscaled structures and the study of their response to externally applied stimuli. The aim of this work is to understand how novel materials behave at minute scales under near-operational conditions and use that information to optimize their design for specific technological applications.

Desired Project Deliverables

Si wafers coated with a thin layer of a transition metal active for CNT growth Si wafers coated with a patterned thin layer of a transition metal active for CNT growth Mats of VA-CNTs grown on 4”-wafers Patterned mats of VA-CNTs grown on 4”-wafers One poster or oral communication at a conference Final written report​