Studying fundamental sciences is the key factor for technological development, as this allows the researchers to better understand the natural phenomena behind human discoveries. In the context of semiconductor innovation, for example, the physics principles of carrier recombination and the importance of quantum mechanics, including carrier quantum confinement, localization, and their effects on the carrier wavefunction, need to be studied in order to ensure efficient semiconductor-based devices. Mainly, technology based on wide bandgap semiconductors as high-energy optoelectronics based on these materials that operate at the deep UV and UV spectral ranges got scientists attention due to their use for many applications in different fields, such as medical treatment, astronomy investigations, material analysis, missile detection, space communications, security systems, and x-ray imaging. Due to the lack of suitable substrates, the emitting devices still need further enhancement. For example, no commercial laser diode operates in the UV spectral range below 375 eV. Therefore, in this project, this issue will be addressed to enhance the emission of these materials. The project will focus on studying the fundamental physics of the carrier dynamics of wide-bandgap semiconductors such as III-nitrides and oxides. Several structures will be investigated experimentally and theoretically for developing wide bandgap semiconductor-based materials, one of which is carrier confinement using different novel approaches. The project goals will be achieved by employing time-integrated photoluminescence (PL) using CW lasers as well as time-resolved PL using ultrafast oscillators attached to streak camera or photon-counting detection systems. In addition, PL excitation will be used to understand the origin of the emitted light using a Xe lamp attached to a fluorescence system. The theoretical simulation of emitting devices will be carried out by analytical code, such as Lumerical.